STF4N80K5 datasheet(4/23 Pages) STMICROELECTRONICS

No. de pieza	STF4N80K5

Descripción Electrónicos	N-channel 800 V, 2.1 ??typ., 3 A MDmesh??K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

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Electrical characteristics

STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5

4/23

DocID025105 Rev 3

2

Electrical characteristics

(Tcase =25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

800

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 800 V

1

µA

VDS = 800 V, TC=125 °C

50

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

±10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 100 µA

3

4

5

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 1.5 A

2.1

2.5

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

-

175

-

pF

Coss

Output capacitance

-

18

-

pF

Crss

Reverse transfer

capacitance

-0.5

-

pF

Co(tr)

(1)

1.

Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

Equivalent

capacitance time

-

26

-

pF

Co(er)

(2)

2.

Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

Equivalent

capacitance energy

-

11

-

pF

Rg

Gate input resistance

f=1 MHz, ID = 0

-

15

-

Ω

Qg

Total gate charge

VDD = 640 V, ID = 3 A,

VGS = 10 V

(see Figure 19)

-10.5

-

nC

Qgs

Gate-source charge

-

2

-

nC

Qgd

Gate-drain charge

-

7.5

-

nC

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