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STP7N60M2 Datasheet(PDF) 1 Page - STMicroelectronics

No. de pieza STP7N60M2
Descripción Electrónicos  Extremely low gate charge
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP7N60M2 Datasheet(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
June 2013
DocID024622 Rev 1
1/21
STD7N60M2, STP7N60M2,
STU7N60M2
N-channel 600 V, 0.86
Ω typ., 5 A MDmesh II Plus™ low Qg
Power MOSFET in DPAK, TO-220 and IPAK packages
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
TO-220
1
2
3
TAB
1
3
TAB
DPAK
3
2
1
TAB
IPAK
AM15572v1
, TAB
Order codes
VDS @
TJmax
RDS(on)
max
ID
STD7N60M2
650 V
0.95
Ω
5 A
STP7N60M2
STU7N60M2
Table 1. Device summary
Order codes
Marking
Package
Packaging
STD7N60M2
7N60M2
DPAK
Tape and reel
STP7N60M2
TO-220
Tube
STU7N60M2
IPAK
www.st.com


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