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STD11N50M2 Datasheet(Hoja de datos) 1 Page - STMicroelectronics

No. de Pieza. STD11N50M2
Descripción  Low gate input resistance
Descarga  19 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
June 2014
DocID025909 Rev 2
1/19
STD11N50M2,
STF11N50M2
N-channel 500 V, 0.45
Ω typ,8 A, MDmesh II Plus™ low Qg
Power MOSFETs in DPAK and TO-220FP packages
Datasheet - preliminary data
Figure 1. Internal schematic diagram
Features
• Extremely low gate charge
• Lower R
DS(on)
x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q
g
. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
AM15572v1
, TAB
TO-220FP
DPAK
1
3
TAB
1
2
3
Order codes
VDS @ TJmax
RDS(on) max
ID
STD11N50M2
550 V
0.53
8 A
STF11N50M2
Table 1. Device summary
Order codes
Marking
Package
Packaging
STD11N50M2
11N50M2
DPAK
Tape and reel
STF11N50M2
TO-220FP
Tube
www.st.com




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