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STD12N65M2 Datasheet(Hoja de datos) 3 Page - STMicroelectronics

No. de Pieza. STD12N65M2
Descripción  Extremely low gate charge
Descarga  16 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STD12N65M2
Electrical ratings
DocID027317 Rev 2
3/16
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
8
A
ID
Drain current (continuous) at TC = 100 °C
5
A
IDM
(1)
Drain current (pulsed)
32
A
PTOT
Total dissipation at TC = 25 °C
85
W
dv/dt
(2)
Peak diode recovery voltage slope
15
V/ns
dv/dt
(3)
MOSFET dv/dt ruggedness
50
V/ns
Tstg
Storage temperature
- 55 to 150
°C
Tj
Operating junction temperature
Notes:
(1)
Pulse width limited by safe operating area.
(2)
ISD ≤ 8 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V.
(3)
VDS ≤ 520 V
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
1.47
°C/W
Rthj-pcb
Thermal resistance junction-pcb max
(1)
50
°C/W
Notes:
(1)
When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetetive or not repetetive (pulse width limited by
Tjmax)
1.6
A
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V)
250
mJ




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