Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
STD47N10F7AG Datasheet(PDF) 4 Page - STMicroelectronics |
|
STD47N10F7AG Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 16 page Electrical characteristics STD47N10F7AG 4/16 DocID027183 Rev 3 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4: Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 100 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 100 V 10 µA VGS = 0 V, VDS = 100 V, TC = 125 °C(1) 100 IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2.5 4.5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 22.5 A 12.5 18 mΩ Notes: (1)Defined by design, not subject to production test. Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 50 V, f = 1 MHz, VGS = 0 V - 1640 - pF Coss Output capacitance - 360 - pF Crss Reverse transfer capacitance - 25 - pF Qg Total gate charge VDD = 50 V, ID = 45 A, VGS = 0 to 10 V (see Figure 14: "Test circuit for gate charge behavior") - 25 - nC Qgs Gate-source charge - 5.1 - nC Qgd Gate-drain charge - 12.2 - nC |
Número de pieza similar - STD47N10F7AG |
|
Descripción similar - STD47N10F7AG |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |