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STD47N10F7AG Datasheet(PDF) 5 Page - STMicroelectronics |
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STD47N10F7AG Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 16 page STD47N10F7AG Electrical characteristics DocID027183 Rev 3 5/16 Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 50 V, ID = 22.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform") - 15 - ns tr Rise time - 17 - ns td(off) Turn-off delay time - 24 - ns tf Fall time - 8 - ns Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 45 A ISDM(1) Source-drain current (pulsed) - 180 A VSD(2) Forward on voltage VGS = 0 V, ISD = 45 A - 1.1 V trr Reverse recovery time ISD = 45 A, di/dt = 100 A/µs, VDD = 80 V, TJ = 150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 53 ns Qrr Reverse recovery charge - 67 nC IRRM Reverse recovery current - 2.5 A Notes: (1)Pulse width is limited by safe operating area. (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% |
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