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STB15N65M5 Datasheet(PDF) 7 Page - STMicroelectronics |
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STB15N65M5 Datasheet(HTML) 7 Page - STMicroelectronics |
7 / 19 page STB15N65M5, STD15N65M5 Electrical characteristics Doc ID 023207 Rev 1 7/19 Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance Figure 10. Capacitance variations Figure 11. Output capacitance stored energy Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on-resistance vs temperature VGS 6 4 2 0 0 5 Qg(nC) (V) 20 8 10 15 10 VDD=520V ID=5.5A 25 300 200 100 0 400 500 VDS (V) VDS 12 AM15289v1 RDS(on) 0.31 0.29 0.27 0.25 0 4 ID(A) ( Ω) 2 6 0.33 0.35 VGS=10V 8 10 AM15293v1 C 1000 100 10 1 0.1 10 VDS(V) (pF) 1 100 Ciss Coss Crss AM15290v1 Eoss 1 0.5 0 0 100 VDS(V) (µJ) 400 1.5 200 300 2 2.5 500 600 3 3.5 4 AM15291v1 VGS(th) 1.00 0.90 0.80 0.70 -50 0 TJ(°C) (norm) -25 1.10 75 25 50 100 ID = 250 µA VDS = VGS AM05459v2 RDS(on) 1.7 1.3 0.9 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 VGS= 10 V ID= 5.5 A AM05460v2 |
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