STB100NF04T4 datasheet(3/20 Pages) STMICROELECTRONICS

No. de pieza	STB100NF04T4

Descripción Electrónicos	AEC-Q101 qualified

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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STB100NF04T4, STP100NF04

Electrical ratings

DocID9969 Rev 7

3/20

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

40

V

VGS

Gate- source voltage

±20

V

ID (1)

Drain current (continuous) at TC = 25°C

120

A

ID (1)

Drain current (continuous) at TC=100°C

120

A

IDM (2)

Drain current (pulsed)

480

A

PTOT

Total dissipation at TC = 25°C

300

W

dv/dt(3)

Peak diode recovery voltage slope

6

V/ns

EAS (4)

Single pulse avalanche energy

1.2

J

Tj

Operating junction temperature range

- 55 to 175

°C

Tstg

Storage temperature range

Notes:

(1)Current limited by package

(2)Pulse width limited by safe operating area.

(3)ISD ≤120 A, di/dt ≤300A/μs, VDD =V(BR)DSS, Tj ≤ TJMAX

(4)Starting Tj = 25 °C, ID = 60 A, VDD = 30 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

D²PAK

TO-220

Rthj-case

Thermal resistance junction-case

0.5

°C/W

Rthj-pcb(1)

Thermal resistance junction-pcb

35

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

°C/W

Notes:

(1)When mounted on a 1-inch² FR-4 board, 2oz Cu.

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