STFI13NK60Z datasheet(1/13 Pages) STMICROELECTRONICS

No. de pieza	STFI13NK60Z

Descripción Electrónicos	N-channel 600 V, 0.48 廓, 13 A, Zener-protected SuperMESH??Power MOSFET in I짼PAKFP package

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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This is information on a product in full production.

March 2012

Doc ID 018969 Rev 3

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13

STFI13NK60Z

N-channel 600 V, 0.48

Ω, 13 A, Zener-protected SuperMESH™

Power MOSFET in I²PAKFP package

Datasheet — production data

Features

■ Fully insulated and low profile package with

increased creepage path from pin to heatsink

plate

■ Gate charge minimized

■ Very low intrinsic capacitance

Applications

■ Switching applications

Description

This device is an N-channel Zener-protected

Power MOSFET developed using

STMicroelectronics' SuperMESH™ technology,

achieved through optimization of ST's well

established strip-based PowerMESH™ layout. In

addition to a significant reduction in on-

resistance, this device is designed to ensure a

high level of dv/dt capability for the most

demanding applications.

Figure 1.

Internal schematic diagram

Order code

VDSS

RDS(on)

max

ID

PTOT

STFI13NK60Z

600 V

<0.55

Ω

13 A

35 W

PAKFP

2

I

1

2

3

(TO-281)

D(2)

G(1)

S(3)

AM01476v1

Table 1.

Device summary

Order code

Marking

Package

Packaging

STFI13NK60Z

13NK60Z

I²PAKFP

(TO-281)

Tube

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