STFW2N105K5 datasheet(3/14 Pages) STMICROELECTRONICS

No. de pieza	STFW2N105K5

Descripción Electrónicos	N-channel 1050 V, 6 廓 typ., 1.5 A Zener-protected SuperMESH??5 Power MOSFET in a TO-3PF package

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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DocID026320 Rev 1

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STFW2N105K5

Electrical ratings

14

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

GS

Gate- source voltage

30

V

I

D

Drain current (continuous) at T

C

= 25 °C

2

(1)

1.

Pulse width limited by safe operating area.

A

I

D

Drain current (continuous) at T

C

= 100 °C

1.3

(1)

A

I

DM

Drain current (pulsed)

6

A

P

TOT

Total dissipation at T

C

= 25 °C

30

W

I

AR

Max current during repetitive or single pulse avalanche

0.5

A

E

AS

Single pulse avalanche energy

(starting T

J

= 25 °C, I

D

=I

AS

, V

DD

= 50 V)

90

mJ

dv/dt

(2)

2.

I

SD

≤ 1.5 A, di/dt ≤ 100 A/μs, V

Peak

≤ V

(BR)DSS.

Peak diode recovery voltage slope

4.5

V/ns

dv/dt

(3)

3.

V

SD

≤ 840 V

MOSFET dv/dt ruggedness

50

V/ns

V

ISO

Insulation withstand voltage (RMS) from all three leads to

external heat sink (t=1 s; TC=25 °C)

3500

V

T

j

T

stg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

R

thj-case

Thermal resistance junction-case max

4.2

°C/W

R

thj-amb

Thermal resistance junction-ambient max

50

°C/W

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