STGIPS35K60L1 datasheet(7/21 Pages) STMICROELECTRONICS

No. de pieza	STGIPS35K60L1

Descripción Electrónicos	Short-circuit rugged IGBTs

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STGIPS35K60L1

Electrical characteristics

Doc ID 018864 Rev 3

7/21

3

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 7.

Inverter part

Symbol

Parameter

Test conditions

Value

Unit

Min.

Typ.

Max.

VCE(sat)

Collector-emitter

saturation voltage

VCC = Vboot = 15 V, VIN = 1 "logic

state", IC = 30 A

-2.1

2.7

V

VCC = Vboot = 15 V, VIN = 1 "logic

state", IC = 30 A, TJ = 125 °C

-1.9

ICES

Collector-cut off current

(VIN

(1)= 0 “logic state”)

VCE = 550 V, VCC = VBoot = 15 V

-

500

µA

VF

Diode forward voltage

VIN = 0 "logic state", IF = 30A

-

2.5

V

Switching on/off (inductive load) (1)

ton

Turn-on time

VDD = 410 V,

VCC = Vboot = 15 V,

VIN = 1 "logic state" (see Table 13)

IC = 30 A (see Figure 4 and 5)

-440

-

ns

tc(on)

Crossover time (on)

-

87

-

toff

Turn-off time

-

280

-

tc(off)

Crossover time (off)

-

130

-

trr

Reverse recovery time

-

60

-

Eon

Turn-on switching losses

-

680

-

µJ

Eoff

Turn-off switching losses

-

760

-

di/dt(on)

Rate of rise of on-state

current

VDD = 410 V, VCC = Vboot = 15 V,

VIN = 1 "logic state" (see Table 13),

IC = 70 A (see Figure 4 and 5)

-2000

-

A/µs

ton

Turn-on time

VDD = 410 V,

VCC = Vboot = 15 V,

VIN = 1 "logic state" (see Table 13)

IC = 30 A, TJ = 125 °C

(see

Figure 4 and 5)

-550

-

ns

tc(on)

Crossover time (on)

-

110

-

toff

Turn-off time

-

410

-

tc(off)

Crossover time (off)

-

200

-

trr

Reverse recovery time

-

85

-

Eon

Turn-on switching losses

-

1025

-

µJ

Eoff

Turn-off switching losses

-

1400

-

di/dt(on)

Rate of rise of on-state

current

VDD = 410 V,

VCC = Vboot = 15 V,

VIN = 1 "logic state" (see Table 13)

IC = 70 A, TJ = 125 °C

(see

Figure 4 and 5)

-1750

-

A/µs

1.

tON and tOFF include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are the switching time of IGBT itself

under the internally given gate driving condition. Parameter values take into account a 20 nH stray inductance.

Obsolete

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