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STGW30V60DF Datasheet(PDF) 8 Page - STMicroelectronics |
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STGW30V60DF Datasheet(HTML) 8 Page - STMicroelectronics |
8 / 22 page Electrical characteristics STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF 8/22 DocID024361 Rev 4 Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance Figure 22. Reverse recovery current vs. diode current slope Figure 23. Reverse recovery time vs. diode current slope Figure 24. Reverse recovery charge vs. diode current slope Figure 25. Reverse recovery energy vs. diode current slope t(ns) 0 IC(A) 10 20 10 30 40 VCC=400V, Tj=175°C, VGE=15V Rg=10Ω tdoff tdon 100 tr tf 50 60 AM17427v1 t(ns) 0 Rg(Ω) 10 20 10 30 40 VCC=400V, Tj=175°C, VGE=15V IC=30A tdoff tdon 100 tr tf 1000 AM17428v1 Irm(A) 0 di/dt (A/μs) 500 10 1000 Vr=400V IF=30A Tj=175°C 20 30 40 0 1500 Tj=25°C AM17429v1 trr(μs) 0 di/dt (A/μs) 500 1000 1500 2000 Vr=400V IF=30A Tj=175°C 50 100 150 200 0 2500 Tj=25°C AM17430v1 Qrr(nC) 0 di/dt (A/μs) 500 1000 1500 2000 Vr=400V IF=30A Tj=175°C 500 1000 1500 2000 0 2500 Tj=25°C AM17431v1 Err(μJ) 0 di/dt (A/μs) 500 1000 1500 2000 Vr=400V IF=30A Tj=175°C 200 400 600 800 1000 0 2500 Tj=25°C AM17432v1 |
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