STGW45HF60WD datasheet(3/12 Pages) STMICROELECTRONICS

No. de pieza	STGW45HF60WD

Descripción Electrónicos	45 A, 600 V ultra fast IGBT

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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STGW45HF60WD

Electrical characteristics

Doc ID 15593 Rev 3

3/12

2

Electrical characteristics

(TJ = 25 °C unless otherwise specified)

Table 4.

Static

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0)

IC = 1 mA

600

V

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC= 30 A

VGE = 15V, IC = 30 A,TJ= 125 °C

1.65

2.5

V

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

3.75

5.75

V

ICES

Collector cut-off current

(VGE = 0)

VCE = 600 V

VCE = 600 V, TJ = 125 °C

500

5

µA

mA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ±20 V

± 100

nA

Table 5.

VCE(sat) classification

Symbol

Parameter

Group

Value

Unit

Min.

Max.

VCE(sat)

Collector-emitter saturation voltage

VGE = 15 V, IC= 30 A

A1.68

1.92

V

B1.88

2.17

C2.13

2.50

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

-

2900

260

55

-

pF

Qg

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 400 V, IC = 30 A,

VGE = 15 V,

Figure 17

-

160

17

65

-

nC

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