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TPA6204A1DRB Datasheet(PDF) 4 Page - Texas Instruments |
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TPA6204A1DRB Datasheet(HTML) 4 Page - Texas Instruments |
4 / 26 page 4 TPA6204A1 SLOS429C – MAY 2004 – REVISED MAY 2016 www.ti.com Product Folder Links: TPA6204A1 Submit Documentation Feedback Copyright © 2004–2016 , Texas Instruments Incorporated (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT Supply voltage, VDD 2.5 5.5 V High-level input voltage, VIH SHUTDOWN 1.55 V Low-level input voltage, VIL SHUTDOWN 0.5 V Operating free-air temperature, TA –40 85 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 7.4 Thermal Information THERMAL METRIC(1) TPA6204A1 UNIT DRB (SON) 8 PINS RθJA Junction-to-ambient thermal resistance 50.3 °C/W RθJC(top) Junction-to-case (top) thermal resistance 69.2 °C/W RθJB Junction-to-board thermal resistance 25.5 °C/W ψJT Junction-to-top characterization parameter 1.8 °C/W ψJB Junction-to-board characterization parameter 25.6 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 6.7 °C/W 7.5 Electrical Characteristics: TA = 25°C over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VOS Output offset voltage (measured differentially) VI = 0 V differential, Gain = 1 V/V, VDD = 5.5 V –9 0.3 9 mV PSRR Power supply rejection ratio VDD = 2.5 V to 5.5 V –85 –60 dB VIC Common mode input range VDD = 2.5 V to 5.5 V 0.5 VDD – 0.8 V CMRR Common mode rejection ratio VDD = 5.5 V, VIC = 0.5 V to 4.7 V –63 –40 dB VDD = 2.5 V, VIC = 0.5 V to 1.7 V –63 –40 Low-output swing RL = 8 Ω, VIN+ = VDD, Gain = 1 V/V, VIN− = 0 V or VIN+ = 0 V, VIN− = VDD VDD = 5.5 V 0.45 V VDD = 3.6 V 0.37 VDD = 2.5 V 0.26 0.4 High-output swing RL = 8 Ω, VIN+ = VDD, Gain = 1 V/V, = 0 V or VIN− = VDD VIN − VIN+ = 0 V VDD = 5.5 V 4.95 V VDD = 3.6 V 3.18 VDD = 2.5 V 2 2.13 | IIH | High-level input current, SHUTDOWN VDD = 5.5 V, VI = 5.8 V 58 100 µA | IIL | Low-level input current, SHUTDOWN VDD = 5.5 V, VI = −0.3 V 3 100 µA IQ Quiescent current VDD = 2.5 V to 5.5 V, no load 4 6 mA I(SD) Supply current V(SHUTDOWN) ≤ 0.5 V, VDD = 2.5 V to 5.5 V, RL = 8 Ω 0.01 1 µA Gain RL = 8 Ω 38 k Ω / RI 40 k Ω / RI 42 k Ω / RI V/V Resistance from shutdown to GND 100 k Ω |
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