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2N7002ET1G Datasheet(PDF) 3 Page - ON Semiconductor |
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2N7002ET1G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 5 page 2N7002E www.onsemi.com 3 TYPICAL CHARACTERISTICS Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0 6 4 2 0 0 0.4 0.8 1.2 Figure 3. On−Resistance vs. Drain Current and Temperature Figure 4. On−Resistance vs. Drain Current and Temperature ID, DRAIN CURRENT (A) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Figure 5. On−Resistance vs. Gate−to−Source Voltage Figure 6. On−Resistance Variation with Temperature VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) 10 8 6 4 2 0.4 0.8 1.2 1.6 125 100 75 50 25 0 −25 −50 0.6 1.0 1.4 1.8 2.2 VGS = 10 V 5.0 V 7.0 V 8.0 V 9.0 V 4.5 V 4.0 V 6.0 V 3.5 V 3.0 V 2.5 V 2.0 V TJ = −55°C TJ = 125°C TJ = 25°C TJ = −55°C TJ = 125°C TJ = 25°C TJ = 85°C VGS = 4.5 V ID, DRAIN CURRENT (A) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 TJ = −55°C TJ = 125°C TJ = 25°C TJ = 85°C VGS = 10 V ID = 250 mA ID = 75 mA 150 ID = 0.2 A VGS = 4.5 V VGS = 10 V |
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