2N7002ET1G datasheet(3/5 Pages) ONSEMI

No. de pieza	2N7002ET1G

Descripción Electrónicos	Small Signal MOSFET

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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2N7002E

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TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS, GATE−TO−SOURCE VOLTAGE (V)

6

4

2

0

0.4

0.8

1.2

1.6

2.0

6

4

2

0

0.4

0.8

1.2

Figure 3. On−Resistance vs. Drain Current and

Temperature

Figure 4. On−Resistance vs. Drain Current and

Temperature

ID, DRAIN CURRENT (A)

1.2

1.0

0.8

0.6

0.4

0.2

0

0.4

0.8

1.2

1.6

2.0

2.4

Figure 5. On−Resistance vs. Gate−to−Source

Voltage

Figure 6. On−Resistance Variation with

Temperature

VGS, GATE−TO−SOURCE VOLTAGE (V)

TJ, JUNCTION TEMPERATURE (°C)

10

8

6

4

2

0.4

0.8

1.2

1.6

125

100

75

50

25

0

−25

−50

0.6

1.0

1.4

1.8

2.2

VGS = 10 V

5.0 V

7.0 V

8.0 V

9.0 V

4.5 V

4.0 V

6.0 V

3.5 V

3.0 V

2.5 V

2.0 V

TJ = −55°C

TJ = 125°C

TJ = 25°C

TJ = −55°C

TJ = 125°C

TJ = 25°C

TJ = 85°C

VGS = 4.5 V

ID, DRAIN CURRENT (A)

1.2

1.0

0.8

0.6

0.4

0.2

0

0.4

0.8

1.2

1.6

2.0

2.4

TJ = −55°C

TJ = 125°C

TJ = 25°C

TJ = 85°C

VGS = 10 V

ID = 250 mA

ID = 75 mA

150

ID = 0.2 A

VGS = 4.5 V

VGS = 10 V

Número de pieza similar - 2N7002ET1G

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