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STD110N02RT4G Datasheet(Hoja de datos) 2 Page - ON Semiconductor

No. de Pieza. STD110N02RT4G
Descripción  Power MOSFET
Descarga  6 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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NTD110N02R, STD110N02R
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 V, ID = 250 mA)
Positive Temperature Coefficient
V(BR)DSS
24
28
15
V
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 20 V, VGS = 0 V)
(VDS = 20 V, VGS = 0 V, TJ = 125°C)
IDSS
1.5
10
mA
Gate−Body Leakage Current (VGS = ±20 V, VDS = 0 V)
IGSS
±100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mA)
Negative Threshold Temperature Coefficient
VGS(th)
1.0
1.5
5.0
2.0
V
mV/
°C
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 10 V, ID = 110 A)
(VGS = 4.5 V, ID = 55 A)
(VGS = 10 V, ID = 20 A)
(VGS = 4.5 V, ID = 20 A)
RDS(on)
4.1
5.5
3.9
5.5
4.6
6.2
m
W
Forward Transconductance (VDS = 10 V, ID = 15 A) (Note 3)
gFS
44
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 20 V, VGS = 0 V, f = 1.0 MHz)
Ciss
2710
3440
pF
Output Capacitance
Coss
1105
1670
Transfer Capacitance
Crss
450
640
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
(VGS = 10 V, VDD = 10 V,
ID = 40 A, RG = 3.0 W)
td(on)
11
22
ns
Rise Time
tr
39
80
Turn−Off Delay Time
td(off)
27
40
Fall Time
tf
21
40
Gate Charge
(VGS = 4.5 V, ID = 40 A,
VDS = 10 V) (Note 3)
QT
23.6
28
nC
QGS
5.1
QGD
11
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 20 A, VGS = 0 V) (Note 3)
(IS = 55 A, VGS = 0 V)
(IS = 20 A, VGS = 0 V, TJ = 125°C)
VSD
0.82
0.99
0.65
1.2
V
Reverse Recovery Time
(IS = 30 A, VGS = 0 V,
dIS/dt = 100 A/ms) (Note 3)
trr
36.5
ns
ta
30
tb
25
Reverse Recovery Stored Charge
Qrr
0.048
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.




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