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AD5245BRJ5-R2 Datasheet(PDF) 3 Page - Analog Devices |
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AD5245BRJ5-R2 Datasheet(HTML) 3 Page - Analog Devices |
3 / 16 page AD5245 Rev. 0 | Page 3 of 16 ELECTRICAL CHARACTERISTICS—5 kΩ VERSION (VDD = 5 V ± 10%, or 3 V ± 10%; VA = +VDD; VB = 0 V; –40°C < TA < +125°C; unless otherwise noted.) Table 1. Parameter Symbol Conditions Min Typ1 Max Unit DC CHARACTERISTICS—RHEOSTAT MODE Resistor Differential Nonlinearity2 R-DNL RWB, VA = no connect –1.5 ±0.1 +1.5 LSB Resistor Integral Nonlinearity2 R-INL RWB, VA = no connect –4 ±0.75 +4 LSB Nominal Resistor Tolerance3 ∆RAB TA = 25°C –30 +30 % Resistance Temperature Coefficient ∆RAB/∆T VAB = VDD, Wiper = no connect 45 ppm/°C Wiper Resistance RW 50 120 Ω DC CHARACTERISTICS—POTENTIOMETER DIVIDER MODE (Specifications apply to all VRs) Resolution N 8 Bits Differential Nonlinearity4 DNL –1.5 ±0.1 +1.5 LSB Integral Nonlinearity4 INL –1.5 ±0.6 +1.5 LSB Voltage Divider Temperature Coefficient ∆VW/∆T Code = 0x80 15 ppm/°C Full-Scale Error VWFSE Code = 0xFF –6 –2.5 0 LSB Zero-Scale Error VWZSE Code = 0x00 0 +2 +6 LSB RESISTOR TERMINALS Voltage Range5 VA,B,W GND VDD V Capacitance6 A, B CA,B f = 1 MHz, measured to GND, Code = 0x80 45 pF Capacitance6 W CW f = 1 MHz, measured to GND, Code = 0x80 60 pF Shutdown Supply Current7 IDD_SD VDD = 5.5 V 0.01 1 µA Common-Mode Leakage ICM VA = VB = VDD/2 1 nA DIGITAL INPUTS AND OUTPUTS Input Logic High VIH 2.4 V Input Logic Low VIL 0.8 V Input Logic High VIH VDD = 3 V 2.1 V Input Logic Low VIL VDD = 3 V 0.6 V Input Current IIL VIN = 0 V or 5 V ±1 µA Input Capacitance6 CIL 5 pF POWER SUPPLIES Power Supply Range VDD RANGE 2.7 5.5 V Supply Current IDD VIH = 5 V or VIL = 0 V 3 8 µA Power Dissipation8 PDISS VIH = 5 V or VIL = 0 V, VDD = 5 V 0.2 mW Power Supply Sensitivity PSS ∆VDD = +5 V ± 10%, Code = Midscale ±0.02 ±0.05 %/% DYNAMIC CHARACTERISTICS6, 9 Bandwidth –3dB BW_5K RAB = 5 kΩ, Code = 0x80 1.2 MHz Total Harmonic Distortion THDW VA = 1 V rms, VB = 0 V, f = 1 kHz 0.05 % VW Settling Time tS VA= 5 V, VB = 0 V, ±1 LSB error band 1 µs Resistor Noise Voltage Density eN_WB RWB = 2.5 kΩ, RS = 0 6 nV/√Hz |
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