L1

10 H

m

Q1

D2

D1

C2

4.7 F

m

IFB1

IFB2

IFB3

IFB4

IFB5

IFB6

SW

Fault

VBAT

Cin

EN

DCTRL

ISET

PGND

GND

R1

62kW

TPS61181/2

C4

0.1 F

m

Optional

5 Vto 24 V

C1

4.7 F

m

10 WLEDinseries,120 mA total

EN

PWMDimming

R2

51Ω

C3

1 F

m

R3

100kW

TPS61180/1/2

SLVS801E – DECEMBER 2007 – REVISED APRIL 2013

www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

Figure 1. TPS61181/2 TYPICAL APPLICATION

PACKAGE

IC SUPPLY

SWITCHING FREQUENCY

PACKAGE MARKING

(TYP)

TPS61180RTE

External 3.3 V

1.0 MHz

CCG

TPS61181RTE

Built-in LDO

1.0 MHz

CCH

TPS61182RTE

Built-in LDO

1.3 MHz

CCI

(1)

For the most current package and ordering information, see the Package Option Addendum at the end

of this document, or see the TI website at www.ti.com.

2

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Product Folder Links: TPS61180/1/2