CAT660 datasheet(6/16 Pages) CATALYST

No. de pieza	CAT660

Descripción Electrónicos	100mA CMOS Charge Pump Inverter/Doubler

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Fabricante Electrónico	CATALYST [Catalyst Semiconductor]

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6 / 16 page

CAT660

6

Doc. No. 5000, Rev. U

The 1/FC1 term can be modeled as an equivalent

impedance REQ. A simple equivalent circuit is shown in

figure 3. This circuit does not include the switch

resistance nor does it include output voltage ripple. It

does allow one to understand the switch-capacitor

topology and make prudent engineering tradeoffs.

For example, power conversion efficiency is set by the

output impedance, which consists of REQ and switch

resistance. As switching frequency is decreased, REQ,

the 1/FC1 term, will dominate the output impedance,

causing higher voltage losses and decreased efficiency.

As the frequency is increased quiescent current

increases. At high frequency this current becomes

significant and the power efficiency degrades.

The oscillator is designed to operate where voltage

losses are a minimum. With external 150

µF capacitors,

the internal switch resistances and the Equivalent Series

Resistance (ESR) of the external capacitors determine

the effective output impedance.

A block diagram of the CAT660 is shown in figure 4. The

CAT660 is a replacement for the MAX660 and the

LTC660.

Figure 2. Switched-Capacitor Building Block

Figure 3. Switched-Capacitor Equivalent Circuit

APPLICATION INFORMATION

Circuit Description and Operating Theory

The CAT660 switches capacitors to invert or double an

input voltage.

Figure 2 shows a simple switch capacitor circuit. In

position 1 capacitor C1 is charged to voltage V1. The

total charge on C1 is Q1 = C1V1. When the switch

moves to position 2, the input capacitor C1 is discharged

to voltage V2. After discharge, the charge on C1 is Q2 =

C1V2.

The charge transferred is:

∆Q = Q1 - Q2 = C1 × (V1 - V2)

If the switch is cycled "F" times per second, the current

(charge transfer per unit time) is:

I = F

× ∆Q = F × C1 (V1 - V2)

Rearranging in terms of impedance:

I=

(V1-V2)

V1-V2

(1/FC1)

REQ

=

V1

C1

C2

RL

V2

V1

C2

RL

V2

REQ

REQ =

1

FC1

Número de pieza similar - CAT660

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Catalyst Semiconductor	CAT660	867Kb / 28P	Catalyst Semiconductor
Catalyst Semiconductor	CAT660	174Kb / 16P	100mA CMOS Charge Pump Inverter/Doubler
ON Semiconductor	CAT660	157Kb / 15P	100 mA CMOS Charge Pump Inverter/Doubler May, 2010 ??Rev. 24
	CAT660	142Kb / 13P	100 mA CMOS Charge Pump Inverter/Doubler July, 2012 ??Rev. 26
	CAT660B	142Kb / 13P	100 mA CMOS Charge Pump Inverter/Doubler July, 2012 ??Rev. 26

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Descripción similar - CAT660

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
ON Semiconductor	CAT660ELA	177Kb / 16P	100mA CMOS Charge Pump Inverter/Doubler Doc. No. MD-5000, Rev. X
Catalyst Semiconductor	CAT660	174Kb / 16P	100mA CMOS Charge Pump Inverter/Doubler
Catalyst Semiconductor	CAT661	488Kb / 16P	High Frequency 100mA CMOS Charge Pump, Inverter/Doubler
ON Semiconductor	CAT661ELA	183Kb / 17P	High Frequency 100mA CMOS Charge Pump, Inverter/Doubler Doc. No. MD-5003, Rev. L
Catalyst Semiconductor	CAT661	173Kb / 17P	High Frequency 100mA CMOS Charge Pump, Inverter/Doubler
ON Semiconductor	CAT660	157Kb / 15P	100 mA CMOS Charge Pump Inverter/Doubler May, 2010 ??Rev. 24
	CAT660EVA-GT3	142Kb / 13P	100 mA CMOS Charge Pump Inverter/Doubler July, 2012 ??Rev. 26
	CAT661	164Kb / 16P	High Frequency 100 mA CMOS Charge Pump, Inverter/Doubler May, 2010 ??Rev. 11
	CAT661	142Kb / 14P	High Frequency 100 mA CMOS Charge Pump, Inverter/Doubler July, 2012 ??Rev. 12
Sipex Corporation	SP6660	284Kb / 22P	200mA Charge Pump Inverter or Doubler

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