CAT660ESA-TE13 datasheet(2/16 Pages) CATALYST

No. de pieza	CAT660ESA-TE13

Descripción Electrónicos	100mA CMOS Charge Pump Inverter/Doubler

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Fabricante Electrónico	CATALYST [Catalyst Semiconductor]

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CAT660

2

Doc. No. 5000, Rev. U

8

7

6

5

1

2

3

4

BOOST/FC

CAP+

GND

CAP-

V+

OSC

LV

OUT

CAT

660

8

7

6

5

1

2

3

4

BOOST/FC

CAP+

GND

CAP-

V+

OSC

LV

OUT

CAT

660

PIN DESCRIPTIONS

Circuit Configuration

Pin Number

Name

Inverter Mode

Doubler Mode

Boost/FC

Oscillator Frequency

Open

10kHz typical

V+

80kHz typical, 40kHz minimum

2

CAP+

Charge pump capacitor. Positive terminal.

Same as inverter.

3

GND

Power supply ground.

Power supply. Positive voltage input.

4

CAP-

Charge pump capacitor. Negative terminal.

Same as inverter.

5

OUT

Output for negative voltage.

Power supply ground.

6

LV

LV must be tied to OUT for all input

voltages.

8

V+

Power supply. Positive voltage input.

Positive voltage output.

Frequency Control for the internal oscilla-

tor. With an external oscillator BOOST/FC

has no effect.

Same as inverter.

Low-Voltage selection pin. When the input

voltage is less than 3V, connect LV to GND.

For input voltages above 3V, LV may be

connected to GND or left open. If OSC is

driven externally, connect LV to GND.

Oscillator control input. An external capacitor

can be connected to lower the oscillator

frequency. An external oscillator can drive

OSC and set the chip operating frequency.

The charge-pump frequency is one-half the

frequency at OSC.

Same as inverter. Do not overdrive

OSC in doubling mode. Standard logic

levels will not be suitable. See the

applications section for additional

information.

7

OSC

Oscillator Frequency

10kHz typical, 5kHz minimum

80kHz typical, 40kHz minimum

1

Boost/FC

PIN CONFIGURATION

8

7

6

5

1

2

3

4

BOOST/FC

CAP+

GND

CAP-

V+

OSC

LV

OUT

CAT

660

(Top View)

TDFN Package: 4mm x 4mm

0.8mm maximum height

SOIC Package (S, X)

TDFN Package (RD8, ZD8)

DIP Package (P)

ORDERING INFORMATION

Part Number

Package

Temperature Range

CAT660EPA

8 lead Plastic DIP

-40

°C to 85°C

CAT660ESA

8-lead SOIC

-40

°C to 85°C

CAT660ESA-TE13

8-lead SOIC, Tape & Reel

-40

°C to 85°C

CAT660ERD8

8-pad TDFN

-40

°C to 85°C

CAT660EVA

8-lead SOIC (Lead-free, Halogen-free)

-40

°C to 85°C

CAT660EVA-TE13

8-lead SOIC (Lead-free, Halogen-free)

-40

°C to 85°C

CAT660EZD8

8-pad TDFN (Lead-free, Halogen-free)

-40

°C to 85°C

(Top View)

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CAT660ESA-TE13 Datasheet(PDF) 2 Page - Catalyst Semiconductor

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