TPS61161-Q1 datasheet(6/39 Pages) TI1

No. de pieza	TPS61161-Q1

Descripción Electrónicos	White LED Drivers With Digital and PWM Brightness Control in 2-mm x 2-mm WSON Package

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Fabricante Electrónico	TI1 [Texas Instruments]

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6

TPS61160, TPS61161

SLVS791E – NOVEMBER 2007 – REVISED JULY 2016

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Product Folder Links: TPS61160 TPS61161

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6.5 Electrical Characteristics

VIN = 3.6 V, CTRL = VIN, TA = –40°C to +85°C, typical values are at TA = 25°C (unless otherwise noted).

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY CURRENT

VI

Input voltage

2.7

18

V

IQ

Operating quiescent current into VIN

Device PWM switching no load

1.8

mA

ISD

Shutdown current

CRTL=GND, VIN = 4.2 V

1

μA

UVLO

Undervoltage lockout threshold

VIN falling

2.2

2.5

V

Vhys

Undervoltage lockout hysterisis

70

mV

ENABLE AND REFERENCE CONTROL

V(CTRLh)

CTRL logic high voltage

VIN = 2.7 V to 18 V

1.2

V

V(CTRLl)

CTRL logic low voltage

VIN = 2.7 V to 18 V

0.4

V

R(CTRL)

CTRL pull down resistor

400

800

1600

k

Ω

VOLTAGE AND CURRENT CONTROL

VREF

Voltage feedback regulation voltage

196

200

204

mV

V(REF_PWM)

Voltage feedback regulation voltage

under brightness control

VFB = 50 mV

47

50

53

mV

VFB = 20 mV

17

20

23

IFB

Voltage feedback input bias current

VFB = 200 mV

2

μA

ƒS

Oscillator frequency

500

600

700

kHz

Dmax

Maximum duty cycle

VFB = 100 mV, measured on the

drive signal of the switching FET

93%

95%

tmin_on

Minimum on pulse width

40

ns

Isink

Comp pin sink current

100

μA

Isource

Comp pin source current

100

μA

Gea

Error amplifier transconductance

240

320

400

μmho

Rea

Error amplifier output resistance

6

M

Ω

ƒea

Error amplifier crossover frequency

5 pF connected to COMP

500

kHz

POWER SWITCH

RDS(on)

N-channel MOSFET on-resistance

VIN = 3.6 V

0.3

0.6

Ω

VIN = 3 V

0.7

ILN_NFET

N-channel leakage current

VSW = 35 V, TA = 25°C

1

μA

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