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NTE102 Datasheet(Hoja de datos) 1 Page - NTE Electronics

No. de Pieza. NTE102
Descripción  Germanium Complementary Transistors Power Output, Driver
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Fabricante  NTE [NTE Electronics]
Página de inicio  http://www.nteinc.com
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NTE102 (PNP) & NTE103 (NPN)
Germanium Complementary Transistors
Power Output, Driver
Description:
The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for me-
dium–speed saturated switching applications.
Features:
D Low Collector–Emitter Saturation Voltage:
VCE(sat) = 200mV Max @ IC = 24mA
D High Emitter–Base Breakdown Voltage:
V(BR)EBO = 12V Min @ IE = 20µA
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO
25V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCES
24V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
12V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, IC
150mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Current, IE
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TA = +25°C), PD
150mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25
°
2mW/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TC = +25°C), PD
300mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25
°
4mW/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ
–65
° to +100°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Junction Temperature Range, Tstg
–65
° to +100°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Base Breakdown Voltage
V(BR)CBO IC = 20µA, IE = 0
25
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 20µA, IC = 0
12
V
Punch–Through Voltage
VPT
VEBfl = 1V, Note 1
24
V
Collector Cutoff Current
ICBO
VCB = 12V, IE = 0
0.8
5.0
µA
VCB = 12V, IE = 0, TA = +80°C
20
90
µA
Emitter Cutoff Current
IEBO
VEB = 2.5V, IC = 0
0.5
2.5
µA
Note 1. VPT is determined by measuring the Emitter–Base floating potential VEBfl, using a voltmeter
with 11M
Ω minimum input impedance. The Collector–Base Voltage, VCB, is increased until
VEBfl = 1V; this value of VCB = (VPT + 1).




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