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NTE102 Datasheet(Hoja de datos) 2 Page - NTE Electronics

No. de Pieza. NTE102
Descripción  Germanium Complementary Transistors Power Output, Driver
Descarga  2 Pages
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Fabricante  NTE [NTE Electronics]
Página de inicio  http://www.nteinc.com
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics
DC Current Gain
hFE
VCE = 150mV, IC = 12mA
30
80
VCE = 200mV, IC = 24mA
24
90
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 12mA, IB = 0.4mA
0.09
0.15
V
IC = 24mA, IB = 1mA
0.09
0.20
V
Base–Emitter Voltage
VBE
IC = 12mA, IB = 0.4mA
0.27
0.35
V
IC = 24mA, IB = 1mA
0.30
0.40
V
Small–Signal Characteristics
Alpha Cutoff Frequency
fhfb
VCB = 6V, IE = 1mA
4
25
MHz
Output Capacitance
Cob
VCB = 6V, IE = 1mA, f = 1MHz
8
20
pF
Input Impedance
hie
VCE = 6V, IE = 1mA, f = 1MHz
3.6
k
Voltage Feedback Ratio
hre
8
x 10–4
Small–Signal Current Gain
hfe
135
Output Admittance
hoe
50
µmhos
Switching Characteristics
Delay Time
td
0.07
µs
Rise Time
tr
0.12
µs
Storage Time
ts
0.20
µs
Fall Time
tf
0.10
µs
Stored Base Charge
Qsb
300
1400
pC
45
°
.031 (.793)
.019 (0.5) Dia
Emitter
Base
Collector
.352 (8.95) Dia Max
.320 (98.13) Dia Max
.250 (6.35)
Max
1.500 (38.1)
Min




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