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NTE102A Datasheet(Hoja de datos) 1 Page - NTE Electronics

No. de Pieza. NTE102A
Descripción  Germanium Complementary Transistors Medium Power Amplifier
Descarga  2 Pages
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Fabricante  NTE [NTE Electronics]
Página de inicio  http://www.nteinc.com
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NTE102A (PNP) & NTE103A (NPN)
Germanium Complementary Transistors
Medium Power Amplifier
Description:
The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type
package designed for use as a medium power amplifier.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO
32V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
10V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, PC
650mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ
+90
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +90°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Base Voltage
VCBO
IC = 200µA, IE = 0
32
V
Collector Cutoff Current
ICBO
VCB = 10V, IE = 0
25
µA
DC Current Gain
hFE1
VCB = 0, IE = 50mA
63
295
hFE2
VCB = 0, IE = 300mA
69
273
Common–Emitter Cutoff Frequency
fαe
VCB = 2V, IE = 10mA
10
kHz
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 500mA, IB = 50mA
0.17
V
Noise Figure
NF
VCB = 5V, IE = 5mA, f = 1kHz
25
dB




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