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CSD22205L Datasheet(PDF) 3 Page - Texas Instruments

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No. de Pieza. CSD22205L
Descripción  8-V P-Channel NexFET Power MOSFET
Descarga  11 Pages
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Fabricante  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
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CSD22205L Datasheet(HTML) 3 Page - Texas Instruments

 
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CSD22205L
www.ti.com
SLPS690 – MAY 2017
Product Folder Links: CSD22205L
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
5 Specifications
5.1 Electrical Characteristics
TA = 25°C (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-source voltage
VGS = 0 V, ID = –250 μA
–8
V
IDSS
Drain-to-source leakage current
VGS = 0 V, VDS = –6.4 V
–100
nA
IGSS
Gate-to-source leakage current
VDS = 0 V, VGS = –6 V
–100
nA
VGS(th)
Gate-to-source threshold voltage
VDS = VGS, ID = –250 μA
–0.4
–0.7
–1.05
V
RDS(on)
Drain-to-source on resistance
VGS = –1.5 V, ID = –0.2 A
30
m
VGS = –1.8 V, ID = –1 A
20
40
VGS = –2.5 V, ID = –1 A
11.5
15.0
VGS = –4.5 V, ID = –1 A
8.2
9.9
gfs
Transconductance
VDS = –0.8 V, ID = –1 A
10.4
S
DYNAMIC CHARACTERISTICS
CISS
Input capacitance
VGS = 0 V, VDS = –4 V, ƒ = 1 MHz
1070
1390
pF
COSS
Output capacitance
560
730
pF
CRSS
Reverse transfer capacitance
190
250
pF
RG
Series gate resistance
30
Ω
Qg
Gate charge total (–4.5 V)
VDS = –4 V, ID = –1 A
6.5
8.5
nC
Qgd
Gate charge gate-to-drain
1.0
nC
Qgs
Gate charge gate-to-source
1.2
nC
Qg(th)
Gate charge at Vth
0.7
nC
QOSS
Output charge
VDS = –4 V, VGS = 0 V
4.1
nC
td(on)
Turnon delay time
VDS = –4 V, VGS = –4.5 V,
ID = –1 A , RG = 0 Ω
30
µs
tr
Rise time
14
µs
td(off)
Turnoff delay time
70
µs
tf
Fall time
32
µs
DIODE CHARACTERISTICS
VSD
Diode forward voltage
IS = –1 A, VGS = 0 V
–0.68
–1.0
V
Qrr
Reverse recovery charge
VDS= –4 V, IF = –1 A,
di/dt = 200 A/μs
16
nC
trr
Reverse recovery time
38
ns
(1)
Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
(2)
Device mounted on FR4 material with minimum Cu mounting area.
5.2 Thermal Information
TA = 25°C (unless otherwise stated)
THERMAL METRIC
MIN
TYP
MAX
UNIT
RθJA
Junction-to-ambient thermal resistance(1)
75
°C/W
Junction-to-ambient thermal resistance(2)
225


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