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CSD22205L Datasheet(PDF) 5 Page - Texas Instruments

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No. de Pieza. CSD22205L
Descripción  8-V P-Channel NexFET Power MOSFET
Descarga  11 Pages
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Fabricante  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
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CSD22205L Datasheet(HTML) 5 Page - Texas Instruments

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TC - Case Temperature (°C)
-75
-50
-25
0
25
50
75
100
125
150
175
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
D006
-VGS - Gate-to-Source Voltage (V)
0
1
2
3
4
5
6
0
5
10
15
20
25
30
35
40
D007
TC = 25°C, I D = -1 A
TC = 125°C, I D = -1 A
Qg - Gate Charge (nC)
0
1
2
3
4
5
6
7
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
D004
-VDS -Drain-to-Source Voltage (V)
0
1
2
3
4
5
6
7
8
10
100
1000
10000
D005
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
-VGS - Gate-to-Source Voltage (V)
0
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
30
35
40
45
50
D003
TC = 125°C
TC = 25°C
TC = -55°C
-VDS - Drain-to-Source Voltage (V)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
5
10
15
20
25
30
35
40
45
50
D002
VGS = -1.5 V
VGS = -1.8 V
VGS = -2.5 V
VGS = -4.5 V
5
CSD22205L
www.ti.com
SLPS690 – MAY 2017
Product Folder Links: CSD22205L
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Copyright © 2017, Texas Instruments Incorporated
Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
Figure 2. Saturation Characteristics
VDS = –5 V
Figure 3. Transfer Characteristics
ID = –1 A
VDS = –4 V
Figure 4. Gate Charge
Figure 5. Capacitance
ID = –250 µA
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage


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