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CSD22205L Datasheet(PDF) 1 Page - Texas Instruments

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No. de Pieza. CSD22205L
Descripción  8-V P-Channel NexFET Power MOSFET
Descarga  11 Pages
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Fabricante  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
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CSD22205L Datasheet(HTML) 1 Page - Texas Instruments

 
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-VGS - Gate-to-Source Voltage (V)
0
1
2
3
4
5
6
0
5
10
15
20
25
30
35
40
D007
TC = 25°C, I D = -1 A
TC = 125°C, I D = -1 A
Qg - Gate Charge (nC)
0
1
2
3
4
5
6
7
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
D004
ID = -1 A
VDS = -4 V
S
Gate
Source
Drain
G
D
D
1.2 mm.
1.2 mm
Product
Folder
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Now
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD22205L
SLPS690 – MAY 2017
CSD22205L –8-V P-Channel NexFET™ Power MOSFET
1
1 Features
1
Low Resistance
Small Footprint 1.2 mm × 1.2 mm
Low Profile 0.35-mm Height
Lead Free
Gate-Source Voltage Clamp
Gate ESD Protection
RoHS Compliant
Halogen Free
2 Applications
Battery Management
Load Switch
Battery Protection
3 Description
This –8-V, 8.2-mΩ, 1.2-mm × 1.2-mm Land Grid
Array (LGA) NexFET™ device has been designed to
deliver the lowest on resistance and gate charge in
the smallest outline possible with excellent thermal
characteristics in an ultra-low profile. The Land Grid
Array (LGA) package is a silicon chip scale package
with metal pads instead of solder balls.
Top View and Circuit Configuration
Product Summary
TA = 25°C
VALUE
UNIT
VDS
Drain-to-Source Voltage
–8
V
Qg
Gate Charge Total (–4.5 V)
6.5
nC
Qgd
Gate Charge Gate-to-Drain
1.0
nC
RDS(on)
Drain-to-Source On Resistance
VGS = –1.5 V
30
m
VGS = –1.8 V
20
VGS = –2.5 V
11.5
VGS = –4.5 V
8.2
VGS(th)
Threshold Voltage
–0.7
V
Device Information(1)
DEVICE
QTY
MEDIA
PACKAGE
SHIP
CSD22205L
3000
7-Inch Reel
1.20-mm × 1.20-mm
Land Grid Array
Package
Tape
and
Reel
CSD22205LT
250
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VALUE
UNIT
VDS
Drain-to-Source Voltage
–8
V
VGS
Gate-to-Source Voltage
–6
V
ID
Continuous Drain Current(1)
–7.4
A
IDM
Pulsed Drain Current(2)
–71
A
PD
Power Dissipation(1)
0.6
W
TJ,
Tstg
Operating Junction Temperature,
Storage Temperature
–55 to 150
°C
(1) Min Cu RθJA = 225°C/W.
(2) Pulse width
≤ 100 μs, duty cycle ≤ 1%.
RDS(on) vs VGS
RDS(on) vs VGS


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