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SI4505DY Datasheet(Hoja de datos) 1 Page - Vishay Siliconix

No. de Pieza. SI4505DY
Descripción  N- and P-Channel MOSFET
Descarga  8 Pages
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Fabricante  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Level Shift
D Load Switch
Si4505DY
Vishay Siliconix
New Product
Document Number: 71826
S-20829—Rev. A, 17-Jun-02
www.vishay.com
1
N- and P-Channel MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.018 @ VGS = 10 V
7.8
N-Channel
30
0.027 @ VGS = 4.5 V
6.4
0.042 @ VGS = –4.5 V
–5.0
P-Channel
–8
0.060 @ VGS = –2.5 V
–4.0
S1
D1
G1
D1
S2
D2
G2
D2
SO-8
5
6
7
8
Top View
2
3
4
1
S2
G2
G1
S1
D2
D1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol
10 sec.
Steady State
10 sec.
Steady State
Unit
Drain-Source Voltage
VDS
30
–8
Gate-Source Voltage
VGS
"20
"8
V
_
TA = 25_C
7.8
6.0
–5.0
–3.8
Continuous Drain Current (TJ = 150_C)a, b
TA = 70_C
ID
6.0
5.2
–3.6
–3.0
Pulsed Drain Current
IDM
30
–30
A
Continuous Source Current (Diode Conduction)a, b
IS
1.8
1.0
–1.8
1.0
TA = 25_C
2
1.20
2
1.2
Maximum Power Dissipationa, b
TA = 70_C
PD
1.3
0.75
1.3
0.75
W
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
_C
THERMAL RESISTANCE RATINGS
N-Channel
P- Channel
Parameter
Symbol
Typ
Max
Typ
Max
Unit
t
v 10 sec
50
62.5
50
62.5
Maximum Junction-to-Ambienta
Steady-State
RthJA
85
105
85
105
_C/W
Maximum Junction-to-Foot (Drain)
Steady-State
RthJF
30
40
30
40
C/W
Notes
a.
Surface Mounted on FR4 Board.
b.
t
v 10 sec




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