FEATURES

D

TrenchFETr Power MOSFETS: 2.5-V Rated

D

Low Thermal Resistance

APPLICATIONS

D

Load/Power Switching for Cell Phones and

Pagers

D

PA Switch in Cellular Devices

D

Battery Operated Systems

Si5406DC

Vishay Siliconix

Document Number: 71657

S-21251—Rev. B, 05-Aug-02

www.vishay.com

2-1

N-Channel 2.5-V (G-S) MOSFET

PRODUCT SUMMARY

12

9.5

12

8.5

1206-8 ChipFETt

t

t

t

D

D

D

G

D

D

D

S

1

Bottom View

D

G

S

N-Channel MOSFET

Marking Code

AC XXX

Lot Traceability

and Date Code

Part # Code

Ordering Information: Si5406DC-T1

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

12

V

Gate-Source Voltage

8

V

9.5

6.9

6.8

4.9

A

Pulsed Drain Current

20

A

2.1

1.1

2.5

1.3

W

1.3

0.7

W

Operating Junction and Storage Temperature Range

--55 to 150

_

C

260

_

C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

M i

J

ti

t ≤ 5sec

R

40

50

Steady State

80

95

_

C/W

Maximum Junction-to-Foot (Drain)

Steady State

15

20

C/

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation

process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-

nection.

c.

Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.