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1N4448 Datasheet(Hoja de datos) 1 Page - TEMIC Semiconductors

No. de Pieza. 1N4448
Descripción  Silicon Epitaxial Planar Diodes
Descarga  4 Pages
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Fabricante  TEMIC [TEMIC Semiconductors]
Página de inicio  http://www.temic.de
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1N4148.1N4448
TELEFUNKEN Semiconductors
Rev. A1, 12-Dec-94
1 (4)
Silicon Epitaxial Planar Diodes
Features
D Electrically equivalent diodes:
1N4148 – 1N914
1N4448 – 1N914B
Applications
Extreme fast switches
94 9367
Absolute Maximum Ratings
Tj = 25
_C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
100
V
Reverse voltage
VR
75
V
Peak forward surge current
tp=1
ms
IFSM
2
A
Repetitive peak forward current
IFRM
500
mA
Forward current
IF
300
mA
Average forward current
VR=0
IFAV
150
mA
Power dissipation
l=4mm, TL=45
°C
PV
440
mW
p
l=4mm, TL
x25°C
PV
500
mW
Junction temperature
Tj
200
°C
Storage temperature range
Tstg
–65...+200
°C
Maximum Thermal Resistance
Tj = 25
_C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
l=4mm, TL=constant
RthJA
350
K/W




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