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74LVC1G58GV Datasheet(PDF) 10 Page - NXP Semiconductors

No. de pieza 74LVC1G58GV
Descripción Electrónicos  Low-power configurable multiple function gate
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74LVC1G58GV Datasheet(HTML) 10 Page - NXP Semiconductors

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9397 750 13852
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 15 September 2004
10 of 18
Philips Semiconductors
74LVC1G58
Low-power configurable multiple function gate
14. Transfer characteristics
Measurement points are given in Table 12.
Definitions for test circuit:
RT = Termination resistance should be equal to output impedance Zo of the pulse generator.
CL = Load capacitance including jig and probe capacitance.
RL = Load resistor.
VEXT = Test voltage for switching times.
Fig 12. Load circuitry for switching times.
Table 12:
Measurement points
Supply voltage
Input
Load
VEXT
VCC
VI
tr =tf
CL
RL
tPLH, tPHL tPZH, tPHZ tPZL, tPLZ
1.65 V to 1.95 V
VCC
≤ 2.0 ns
30 pF
1 k
open
GND
2
× VCC
2.3 to 2.7 V
VCC
≤ 2.0 ns
30 pF
500
open
GND
2
× VCC
2.7 V
2.7 V
≤ 2.5 ns
50 pF
500
open
GND
6 V
3.0 V to 3.6 V
2.7 V
≤ 2.5 ns
50 pF
500
open
GND
6 V
4.5 V to 5.5 V
VCC
≤ 2.5 ns
50 pF
500
open
GND
2
× VCC
VEXT
VCC
VI
VO
mna616
D.U.T.
CL
RT
RL
RL
PULSE
GENERATOR
Table 13:
Transfer characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tamb = −40 °C to +85 °C [1]
VT+
positive-going threshold
voltage
see Figure 13, 14, 15 and 16
VCC = 1.8 V
0.70
1.02
1.20
V
VCC = 2.3 V
1.11
1.42
1.60
V
VCC = 3.0 V
1.50
1.79
2.00
V
VCC = 4.5 V
2.16
2.52
2.74
V
VCC = 5.5 V
2.61
2.99
3.33
V
VT−
negative-going threshold
voltage
see Figure 13, 14, 15 and 16
VCC = 1.8 V
0.30
0.53
0.72
V
VCC = 2.3 V
0.58
0.77
1.00
V
VCC = 3.0 V
0.80
1.04
1.30
V
VCC = 4.5 V
1.21
1.55
1.90
V
VCC = 5.5 V
1.45
1.86
2.29
V


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