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TPS25740BRGET Datasheet(PDF) 6 Page - Texas Instruments |
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TPS25740BRGET Datasheet(HTML) 6 Page - Texas Instruments |
6 / 61 page 6 TPS25740B SLVSDR6 – JUNE 2017 www.ti.com Product Folder Links: TPS25740B Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VIN Supply voltage VDD 0 5.5 V VPWR 4.65 25 V VI Applied voltage PCTRL, CC1, CC2, CTL1, CTL2, CTL3 0 5.5 V GD 0 6.5 V DSCG, GDNS, VBUS 0 25 V HIPWR, PSEL 0 DVDD V VI Pin-to-pin voltage ISNS - VBUS –0.1 0.1 V VIH High level input voltage GD 2 1.6 V PCTRL V VIL Low level input voltage GD 1.6 V PCTRL V IS Sinking current CTL1, CTL2, CTL3, ENSRC 1.5 µA GD 80 µA DSCG, transient sinking current 50 ms pulse, 0.25% duty cycle 350 mA DSCG, average 5 mA CS Shunt capacitance CC1, CC2 (C(RX)) 200 560 600 pF VBUS (C(PDIN)) 10 µF DVDD (C(DVDD)) 0.198 0.22 0.242 µF VAUX (C(VAUX)) 0.09 0.1 0.11 µF VTX (C(VTX)) 0.09 0.10 0.11 µF VDD (C(VDD)) 0.09 µF RS Sense resistance Configured for 3 A 5 6.4 mΩ Configured for 5 A 5 5.8 mΩ R(PUD) Pull up/down resistance HIPWR, PSEL (direct to GND or direct to DVDD) 0 1 kΩ HIPWR, PSEL (R(SEL) ) 80 100 120 kΩ R(DSCG) Series resistance Maximum VBUS voltage of 25 V 80 Ω Maximum VBUS voltage of 15 V 43 Ω Maximum VBUS voltage of 6 V 20 Ω TJ Operating junction temperature -40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 7.4 Thermal Information THERMAL METRIC(1) TPS25740B UNIT RGE (VQFN) 24 PINS RθJA Junction-to-ambient thermal resistance 33 °C/W RθJC(top) Junction-to-case (top) thermal resistance 32.6 °C/W RθJB Junction-to-board thermal resistance 10 °C/W ψJT Junction-to-top characterization parameter 0.4 °C/W ψJB Junction-to-board characterization parameter 10 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 2.6 °C/W |
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