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LMV232 Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
No. de pieza LMV232
Descripción Electrónicos  Dual-Channel Integrated Mean Square Power Detector for CDMA & WCDMA
Download  13 Pages
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Fabricante Electrónico  NSC [National Semiconductor (TI)]
Página de inicio  http://www.national.com
Logo NSC - National Semiconductor (TI)

LMV232 Datasheet(HTML) 3 Page - National Semiconductor (TI)

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2.7 DC and AC Electrical Characteristics (Continued)
Unless otherwise specified, all limits are guaranteed to V
DD = 2.7V; TJ = 25˚C. Boldface limits apply at temperature extremes.
(Note 4)
Symbol
Parameter
Condition
Min
Typ
Max
Units
K
DET
Detection Slope
900 MHz
21
µA/mW
1800 MHz
10
1900 MHz
10
2000 MHz
10
f
LOW
LF Input Corner Frequency
Lower −3 dB Point of Detection Slope
60
MHz
f
HIGH
HF Input Corner Frequency
Upper −3 dB Point of Detection Slope
1.0
GHz
A
ISO
Channel Isolation
900 MHz
58
dB
1800 MHz
62
1900 MHz
58
2000 MHz
55
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2: Human body model: 1.5 k
Ω in series with 100 pF. Machine model, 0Ω in series with 100 pF.
Note 3: The maximum power dissipation is a function of TJ(MAX) , θJA and TA. The maximum allowable power dissipation at any ambient temperature is PD =
(TJ(MAX) -TA)/θJA. All numbers apply for packages soldered directly into a PC board.
Note 4: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device such that TJ =TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA.
Note 5: Power in dBV = dBm + 13 when the impedance is 50
Ω.
Note 6: All limits are guaranteed by design or statistical analysis.
Note 7: Typical values represent the most likely parametric norm.
Note 8: Device is set in active mode with a 10 k
Ω resistor from VDD to RFIN/EN. RF signal is applied using a 50Ω RF signal generator AC coupled to the RFIN/EN
pin using a 100 pF coupling capacitor.
Note 9: Turn-on time is measured by connecting a 10 k
Ω resistor to the RFIN/EN pin. Be aware that in the actual application on the front page, the RC-time constant
of resistor R2 and capacitor C adds an additional delay.
Note 10: Typical numbers represent the 3-sigma value of 10k units. 3-sigma value of variation between −40˚C / 25˚C and variation between 25˚C / 85˚C.
www.national.com
3


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