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IRF740 Datasheet(PDF) 1 Page - First Components International |
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IRF740 Datasheet(HTML) 1 Page - First Components International |
1 / 3 page GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain to Current Continuous Pulsed ID IDM 10 40 A Gate-to-Source Voltage Continue Non-repetitive VGS VGSM ±20 ±40 V V Total Power Dissipation Derate above 25 PD 125 1.0 W W/ Operating and Storage Temperature Range TJ, TSTG -55 to 150 Single Pulse Drain-to-Source Avalanche Energy TJ = 25 (VDD = 100V, VGS = 10V, IL = 10A, L = 6mH, RG = 25 ) EAS 300 mJ Thermal Resistance Junction to Case Junction to Ambient JC JA 1.7 62.5 /W Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 260 IRF740 10A 400V N CHANNEL POWER MOSFET 1 3 Case 2 Mechanical Dimensions Description TO-220AB DIMENSION IN MM D S G D |
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