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ADS114S08BIRHBT Datasheet(PDF) 5 Page - Texas Instruments

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No. de pieza ADS114S08BIRHBT
Descripción Electrónicos  Low-Power, Low-Noise, Highly Integrated, 6- and 12-Channel, 4-kSPS, 16-Bit, Delta-Sigma ADC With PGA and Voltage Reference
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Fabricante Electrónico  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
Logo TI1 - Texas Instruments

ADS114S08BIRHBT Datasheet(HTML) 5 Page - Texas Instruments

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ADS114S06B, ADS114S08B
www.ti.com
SBAS852 – AUGUST 2017
Product Folder Links: ADS114S06B ADS114S08B
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Copyright © 2017, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7 Specifications
7.1 Absolute Maximum Ratings
(1)
MIN
MAX
UNIT
Power-supply voltage
AVDD to AVSS
–0.3
5.5
V
AVSS to DGND
–2.8
0.3
DVDD to DGND
–0.3
3.9
IOVDD to DGND
–0.3
5.5
Analog input voltage
AINx, GPIOx, REFPx, REFNx, REFCOM
AVSS – 0.3
AVDD + 0.3
V
Digital input voltage
CS, SCLK, DIN, DOUT/DRDY, DRDY,
START, RESET, CLK
DGND – 0.3
IOVDD + 0.3
V
Input current
Continuous, REFN0, REFOUT
–100
100
mA
Continuous, all other pins except power-supply pins
–10
10
Temperature
Junction, TJ
150
°C
Storage, Tstg
–60
150
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2500
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±1000


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