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CSD18511KTT Datasheet(PDF) 6 Page - Texas Instruments

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No. de Pieza. CSD18511KTT
Descripción  40-V N-Channel NexFET Power MOSFET
Descarga  11 Pages
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Fabricante  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
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CSD18511KTT Datasheet(HTML) 6 Page - Texas Instruments

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TC - Case Temperature (qC)
-50
-25
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
D012
VDS - Drain-to-Source Voltage (V)
0.1
1
10
100
0.1
1
10
100
1000
D010
DC
10 ms
1 ms
100 µs
10 µs
TAV - Time in Avalanche (ms)
0.01
0.1
1
1
10
100
D011
TC = 25q C
TC = 125q C
6
CSD18511KTT
SLPS684 – JULY 2017
www.ti.com
Product Folder Links: CSD18511KTT
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
Single pulse, max RθJC = 0.8°C/W
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
Max RθJC = 0.8°C/W
Figure 12. Maximum Drain Current vs Temperature


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