BTA08F datasheet(2/8 Pages) FOSHAN

No. de pieza	BTA08F

Descripción Electrónicos	Triac in a TO-220F Plastic Package

Download	8 Pages

Scroll/Zoom	100%

Fabricante Electrónico	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Página de inicio	http://www.fsbrec.com/

Logo

2 / 8 page

BTA08F

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 8

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Repetitive peak off-state voltages

VDRM/VRRM

600 and 800

V

RMS on-state current(full sine wave

TC=105℃)

IT(RMS)

8.0

A

Non repetitive surge peak on-state

current(full cycle, Tj initial=25°C)

ITSM(F=50Hz

t=20ms)

80

A

Non repetitive surge peak on-state

current(full cycle, Tj initial=25°C)

ITSM(F=60Hz

t=16.7ms)

84

A

I2t Value for fusing

I2t(tp=10ms)

36

A2s

Critical rate of rise of on-state current IG

=2xIGT tr ≤100 ns（F=120Hz Tj=125℃）

dI/dt

50

A/μs

Peak gate current(tp =20μs Tj=125℃)

IGM

4.0

A

Average gate power dissipation(Tj=125℃)

PG(AV)

1.0

W

Operating junction temperature range

Tj

-40～125

℃

Storage junction temperature range

Tstg

-40～150

℃

Junction to ambient

Rth(j-a)

60

/W

℃

Junction to case (AC)

Rth(j-c)

2.5

/W

℃

符号

Symbol

测试条件

Test Conditions

信号区

Quadrant

BTA08F

单位

Unit

TW

SW

CW

BW

IGT

(1)

VD=12V RL=30Ω

I-II-III

Max.

5

10

35

50

mA

VGT

VD=12V RL=30Ω

I-II-III

Max.

1.3

V

VGD

VD=VDRM RL=3.3KΩ

Tj=125℃

I-II-III

Min.

0.2

V

IH

(2)

IT=100mA

Max.

10

15

35

50

mA

IL

IG=1.2IGT

I-III

Max.

10

25

50

70

mA

II

15

30

60

80

(dV/dt)(2)

VD=67% VDRM gate open Tj=125℃

Min.

20

40

400

1000

V/μs

(dI/dt)c(2)

(dV/dt)c=0.1V/μs Tj=125℃

Min.

3.5

5.4

-

A/m s

(dV/dt)c=10V/μs Tj=125℃

Min.

1.5

2.98

-

Without snubber Tj=125℃

Min.

-

4.5

7

Note 1：minimum IGT is guaranted at 5% of IGT max.

Note 2：for both polarities of A2 referenced to A1.

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

免缓冲器和逻辑电平（3象限） / Snubberless and logic level（3 quadrants)

Número de pieza similar - BTA08F

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
STMicroelectronics	BTA08	68Kb / 5P	SENSITIVE GATE TRIACS
Sirectifier Semiconduct...	BTA08	337Kb / 5P	Discrete Triacs(Non-Isolated/Isolated)
Sirectifier Global Corp...	BTA08	1Mb / 5P	Discrete Triacs(Non-Isolated/Isolated)
STMicroelectronics	BTA08	151Kb / 12P	Snubberless?? logic level and standard 8 A Triacs
JIEJIE MICROELECTRONICS...	BTA08	589Kb / 5P	8A TRIACs

More results

Descripción similar - BTA08F

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Foshan Blue Rocket Elec...	BTA04F	1Mb / 6P	Triac in a TO-220F Plastic Package
	BTA16F	1Mb / 8P	Triac in a TO-220F Plastic Package
	BTA12F	1Mb / 8P	Triac in a TO-220F Plastic Package
	BTA06F	1Mb / 8P	Triac in a TO-220F Plastic Package
	BTA20F	1Mb / 7P	Triac in a TO-220F Plastic Package
	7808F	1Mb / 6P	Voltage Regulator in a TO-220F Plastic Package
	LV20100FCT	815Kb / 6P	Schottky Diode in a TO-220F Plastic Package
	7812F	1Mb / 6P	Voltage Regulator in a TO-220F Plastic Package
	MBRF20150CT	1Mb / 7P	Schottky Diode in a TO-220F Plastic Package
	MBRF10200CT	799Kb / 6P	Schottky Diode in a TO-220F Plastic Package

More results

BTA08F Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

BTA08F Datasheet(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

Número de pieza similar - BTA08F

Descripción similar - BTA08F

Html Pages

1 2 3 4 5 6 7 8

Datasheet Descarga

Enlace URL