2N5087 datasheet(2/6 Pages) FOSHAN

No. de pieza	2N5087

Descripción Electrónicos	Silicon PNP transistor in a TO-92 Plastic Package

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Fabricante Electrónico	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

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2 / 6 page

2N5087

Rev.E Mar.-2016

DATA SHEET

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-50

V

Collector to Emitter Voltage

VCEO

-50

V

Emitter to Base Voltage

VEBO

-3

V

Collector Current - Continuous

IC

-50

mA

Collector Power Dissipation

PC

625

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCBO

IC=-100μA

IE=0

-50

V

Collector to Emitter Breakdown

Voltage

VCEO

VEB=-1V

IB=0

-50

V

Emitter Cut-Off Current

IEBO

VCB=-3V

IC=0

-50

nA

Collector Cut-Off Current

ICBO

VCE=-10V

IE=0

-10

nA

DC Current Gain

hFE(1)

VCE=-5V

IC=-100μA

250

800

hFE(2)

VCE=-5V

IC=-10mA

250

hFE(3)

VCE=-5V

IC=-1mA

250

Collector to Emitter Saturation

Voltage

VCE(sat) IC=-10mA

IC=-1mA

-0.3

V

Base to Emitter On Voltage

VBE(on) IC=-1.0mA

VCE=-5V

-0.85

V

Current Gain Bandwidth Product

fT

IC=-500μA

VCE=-5V

f=20MHz

40

MHz

Collector–Base Capacitance

Ccb

VCB=-5V

IE=0

f=100KHz

4

pF

Small–Signal Current Gain

hfe

IC=-1mA

VCE=-5V

f=1KHz

250

900

Noise Figure

NF

IC=-100μA

VCE=-5V

RS=3KΩ

f=1KHz

2

dB

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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2N5087 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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