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MTB095N10KRL3-0-T3-G Datasheet(PDF) 2 Page - Cystech Electonics Corp. |
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MTB095N10KRL3-0-T3-G Datasheet(HTML) 2 Page - Cystech Electonics Corp. |
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2 / 9 page  CYStech Electronics Corp. Spec. No. : C714L3 Issued Date : 2017.06.19 Revised Date : 2017.07.20 Page No. : 2/9 MTB095N10KRL3 Preliminary CYStek Product Specification Absolute Maximum Ratings (TC=25 °C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 V Continuous Drain Current @ TA=25 °C, VGS=10V 3.3 Continuous Drain Current @ TA=70 °C, VGS=10V ID 2.6 Pulsed Drain Current *1 IDM 16 Avalanche Current @ L=0.1mH IAS 6 A Avalanche Energy @ L=1mH, ID=6A, VDD=50V *2 EAS 18 Repetitive Avalanche Energy @ L=0.05mH EAR 0.625 mJ Total Power Dissipation @TA=25℃ 2.5 Total Power Dissipation @TA=70℃ PD 1.6 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Note : *1 . Pulse width limited by maximum junction temperature *2. Guaranteed by design, not by 100% test. Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 18.5 Thermal Resistance, Junction-to-ambient, max RθJA 50 (Note) °C/W Note : When mounted on a 1 in 2 pad of 2 oz. copper. Characteristics (Tc=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 100 - - VGS=0V, ID=250μA VGS(th) 1.2 - 2.6 V VDS =VGS, ID=250μA GFS *1 - 2.9 - S VDS =10V, ID=1A IGSS - - ± 10 VGS=±16V, VDS=0V - - 1 VDS =80V, VGS =0V IDSS - - 25 μA VDS =80V, VGS =0V, Tj=125 °C - 107 140 VGS =10V, ID=2A RDS(ON) *1 - 127 180 mΩ VGS =4.5V, ID=2A Dynamic Qg *1, 2 - 6.7 10 Qgs *1, 2 - 1.1 1.7 Qgd *1, 2 - 1.6 2.4 nC VDS=80V, VGS=10V, ID=2A td(ON) *1, 2 - 5.2 7.8 tr *1, 2 - 16.6 24.9 td(OFF) *1, 2 - 17 25.5 tf *1, 2 - 5.2 7.8 ns VDS=50V, ID=2A, VGS=10V, RG=1Ω |
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