2SC1959 datasheet(2/6 Pages) FOSHAN

No. de pieza	2SC1959

Descripción Electrónicos	Silicon NPN transistor in a TO-92 Plastic Package

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Fabricante Electrónico	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

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2 / 6 page

2SC1959

Rev.E Mar.-2016

DATA SHEET

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

35

V

Collector to Emitter Voltage

VCEO

30

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current - Continuous

IC

500

mA

Emitter Current - Continuous

IE

-500

mA

Collector Power Dissipation

PC

500

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector Cut-Off Current

ICBO

VCB=35V

IE=0

0.1

μA

Emitter Cut-Off Current

IEBO

VEB=5.0V

IC=0

0.1

μA

DC Current Gain

hFE(1)

VCE=1.0V

IC=100mA

70

400

hFE(2)

VCE=6.0V

IC=400mA

25

Collector to Emitter Saturation

Voltage

VCE(sat)

IC=100mA

IB=10mA

0.1

0.25

V

Collector to Emitter Voltage

VBE

VCE=1.0V

IC=100mA

0.8

1.0

V

Transition Frequency

fT

VCE=6.0V

IC=20mA

300

MHz

Collector Output Capacitance

Cob

VCB=6.0V

IE=0

f=1.0MHz

7.0

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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2SC1959 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

2SC1959 Datasheet(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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