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2SC3279 Datasheet(Hoja de datos) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

No. de Pieza. 2SC3279
Descripción  TO-92 Plastic-Encapsulate Transistors
Descarga  3 Pages
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Fabricante  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Página de inicio  http://www.cj-elec.com/en/
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
2SC3279
TRANSISTOR (NPN)
FEATURES
High DC current gain and excellent hFE linearity
Low saturation voltage
MAXIMUM RATINGS (Ta=25
℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
10
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current –Continuous
2
A
PC
Collector Power Dissipation
750
mW
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
M
in
T
yp
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=1mA , IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,
IB=0
10
V
Emitter-base breakdown voltage
V(BR)EBO
IE=1mA, IC=0
6
V
Collector cut-off current
ICBO
VCB=30 V ,
IE=0
0.1
µA
Emitter cut-off current
IEBO
VEB=6 V ,
IC=0
0.1
µA
DC current gain
hFE
VCE=1V,
IC=0.5A
140
600
Collector-emitter saturation voltage
VCE(sat)
IC=2A, IB= 100mA
0.82
V
Base-emitter voltage
VBE
IC= 2A, VCE=1V
1.5
V
Transition frequency
f T
VCE=1V, IC= 0.5A
150
MHz
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
27
pF
CLASSIFICATION OF
hFE
Rank
L
M
N
P
Range
140-240
200-330
300-450
420-600
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
www.cj-elec.com
1
C,Dec,2015




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