BC640-TA datasheet(2/4 Pages) JIANGSU

No. de pieza	BC640-TA

Descripción Electrónicos	TO-92 Plastic-Encapsulate Transistors

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Fabricante Electrónico	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

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a

T =25

unless otherwise specified

Parameter

Symbol

Test

conditions

M

in

T

yp

M

ax

U

nit

Collector-base breakdown voltage

V(BR)CBO

IC=-100μA,IE=0

BC636

BC638

BC640

-45

-60

-100

V

Collector-emitter breakdown voltage

V(BR)CEO

IC =-1mA,IB=0

BC636

BC638

BC640

-45

-60

-80

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100μA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-30V,IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB= -5V,IC=0

- 0.1

μA

DC current gain

hFE(1)

VCE= -2V,IC=- 5mA

40

hFE(2)

VCE= -2V,IC=- 150mA

63

250

hFE(3)

VCE= -2V,IC=- 500mA

25

Collector-emitter saturation voltage

VCE(sat)

IC=- 500mA,IB= -50mA

-0.5

V

Base-emitter voltage

VBE

VCE= -2V,IC= -500mA

- 1

V

Transition frequency

fT

VCE= -5V,IC=- 50mA,f=100MHz

100

MHz

CLASSIFICATION OF hFE(2)

Rank

BC636-10

BC636-16, BC638-16, BC640-16

Range

63-160

100-250

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BC640-TA Datasheet(PDF) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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