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S9012 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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S9012 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 4 page JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9012 TRANSISTOR (PNP) FEATURES High Collector Current Complementary To S9013 Excellent hFE Linearity MARKING: 2T1 MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA PC Collector Power Dissipation 300 mW RΘJA Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55 ~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-0.1mA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 uA Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 uA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 uA DC current gain hFE VCE=-1V, IC=-50mA 120 400 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -1.2 V Transition frequency fT VCE=-6V,IC=-20mA, f=30MHz 150 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 5 pF CLASSIFICATION OF h FE RANK L H J RANGE 120-200 200-350 300-400 SOT–23 1. BASE 2. EMITTER 3. COLLECTOR www.cj-elec.com 1 A,Jun,2014 www.cj-elec.com C,Oct,2014 JC T |
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