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STD123S Datasheet(Hoja de datos) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

No. de Pieza. STD123S
Descripción  SOT-23 Plastic-Encapsulate Transistors
Descarga  4 Pages
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Fabricante  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Página de inicio  http://www.cj-elec.com/en/
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
STD123S
TRANSISTOR (NPN)
FEATURES
Low saturation medium current application
Extremely low collector saturation voltage
Suitable for low voltage large current drivers
High DC current gain and large current capability
Low on resistance : RON=0.6Ω(Max.) (IB=1mA)
Marking:123
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V (BR) CBO
IC=50μA, IE=0
20
V
Collector-emitter breakdown voltage
V (BR) CEO
IC =1mA, IB=0
15
V
Emitter-base breakdown voltage
V (BR) EBO
IE= 50μA, IC=0
6.5
V
Collector cut-off current
ICBO
VCB= 20 V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 6V, IC=0
0.1
μA
DC current gain
hFE
VCE=1V, IC= 100mA
150
Collector-emitter saturation voltage
VCE (sat)
IC=500mA, IB= 50mA
0.3
V
Transition frequency
fT
VCE=5V, IC=50mA
260
MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
5
pF
On resistance
RON
f=1KHz,IB=1mA,
VIN=0.3V
0.6
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
www.cj-elec.com
1
A,Jun,2014
www.cj-elec.com
C,Oct,2014
JC T
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
15
V
VEBO
Emitter-Base Voltage
6.5
V
IC
Collector Current
1
A
PC
Collector Power Dissipation
350
mW
RΘJA
Thermal Resistance From Junction To Ambient
357
℃/W
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55~+150




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