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SDT1216 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

No. de Pieza. SDT1216
Descripción  P-Channel Enhancement Mode Power MOSFET
Descarga  3 Pages
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Fabricante  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de inicio  http://www.secosgmbh.com
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SDT1216 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

   
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Elektronische Bauelemente
SDT1216
-16A , -12V , RDS(ON) 21 m
P-Channel Enhancement Mode Power MOSFET
23-Nov-2016 Rev.B
Page 2 of 3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
-12
-
-
V
VGS=0, ID= -250μA
Gate-Source Leakage Current
IGSS
-
-
±100
nA
VGS= ±8V, VDS=0
Drain-Source Leakage Current
IDSS
-
-
-1
μA
VDS= -12V, VGS=0
Gate-Threshold Voltage
5
VGS(th)
-0.4
-0.7
-1
V
VDS=VGS, ID= -250μA
Forward Transconductance
5
gfs
-
40
-
S
VDS= -10V, ID= -6.7A
-
-
21
VDS= -4.5V, ID=-6.7A
Static Drain-Source On-Resistance
5
RDS(ON)
-
-
27
mΩ
VGS= -2.5V, ID= -6.2A
Switching Parameters
6
-
60
-
ID= -10A
VDS= -6V
VGS= -8V
Total Gate Charge
Qg
-
35
-
Gate-Source Charge
Qgs
-
5
-
Gate-Drain Change
Qgd
-
10
-
nC
ID= -10A
VDS= -6V
VGS= -4.5V
Input Capacitance
Ciss
-
2700
-
Output Capacitance
Coss
-
680
-
Reverse Transfer Capacitance
Crss
-
590
-
pF
VGS =0
VDS= -10V
f =1.0MHz
Drain-Source Diode Characteristics
Diode Forward Current
5
IS
-
-
-16
A
Diode Forward Voltage
4
VSD
-
-
-1.2
V
IS= -8A, VGS=0
Note:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. This test is performed with no heat sink at Ta=25℃.
3. This test is performed with infinite heat sink at Tc=25℃.
4. Surface mounted on FR4 board, t≤10S.
5. Pulse Test: Pulse With ≤300μs,Duty Cycle≤2%.
6. Guaranteed by design, not subject to production testing.


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