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SI4830ADY Datasheet(PDF) 3 Page - Vishay Siliconix

No. de pieza SI4830ADY
Descripción Electrónicos  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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Si4830ADY
Vishay Siliconix
Document Number: 72021
S-32621—Rev. D, 29-Dec-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
0
240
480
720
960
1200
0
5
10
15
20
25
30
0
5
10
15
20
25
30
0
1234
5
0
5
10
15
20
25
30
0
2468
10
VGS = 10 thru 5 V
TC = 125_C
−55_C
25_C
Output Characteristics
Transfer Characteristics
VDS − Drain-to-Source Voltage (V)
VGS − Gate-to-Source Voltage (V)
3 V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
−50
−25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
3
6
9
12
15
0.000
0.010
0.020
0.030
0.040
0
5
10
15
20
25
30
VDS − Drain-to-Source Voltage (V)
Crss
VDS = 15 V
ID = 7.5 A
ID − Drain Current (A)
VGS = 10 V
ID = 7.5 A
VGS = 10 V
VGS = 4.5 V
Gate Charge
Qg − Total Gate Charge (nC)
Capacitance
On-Resistance vs. Junction Temperature
TJ − Junction Temperature (_C)
Coss
Ciss
4 V
On-Resistance vs. Drain Current


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