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SMS8810 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

No. de pieza SMS8810
Descripción Electrónicos  N-Channel Enhancement Mode Power MOSFET
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Fabricante Electrónico  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de inicio  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SMS8810 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SMS8810
7A , 20V , RDS(ON) 20 mΩ
N-Channel Enhancement Mode Power MOSFET
13-Mar-2015 Rev.A
Page 1 of 3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMS8810 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-23 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-23
3K
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current
ID
7
A
Pulsed Drain Current
1
IDM
30
A
Thermal Resistance Junction-Ambient
RθJA
417
°C / W
Operating Junction & Storage Temperature
TJ, TSTG
150, -55~150
°C
Lead Temperature for Soldering Purposes(1/8’’ from
case for 10 s)
TL
260
°C
Note:
1. Repetitive rating:Pulse width limited by junction temperature.
SOT-23
8810
Top View
A
L
C B
D
G
H
J
F
K
E
1
2
3
1
2
3
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
2.80
3.04
G
0.09
0.18
B
2.10
2.55
H
0.45
0.60
C
1.20
1.40
J
0.08
0.177
D
0.89
1.15
K
0.6 REF.
E
1.78
2.04
L
0.89
1.02
F
0.30
0.50
Top View


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