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AMA930N Datasheet(PDF) 1 Page - Analog Power |
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AMA930N Datasheet(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AMA930N Dual N-Channel 30-V (D-S) MOSFET VDS (V) ID(A) 4.4 3.4 Symbol Limit Units VDS 30 VGS ±12 TA=25°C 4.4 TA=70°C 3.5 IDM ±10 IS 2.2 A TA=25°C 2.1 TA=70°C 1.3 TJ, Tstg -55 to 150 °C Symbol Maximum Units 60 110 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRODUCT SUMMARY 30 rDS(on) (mΩ) 63 @ VGS = 4.5V 110 @ VGS = 2.5V Power Dissipation a Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Continuous Drain Current a Gate-Source Voltage ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Maximum Junction-to-Ambient a t <= 10 sec Steady State THERMAL RESISTANCE RATINGS °C/W Parameter RθJA A ID Operating Junction and Storage Temperature Range PD W Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits © Preliminary 1 Publication Order Number: DS-AMA930N-2010 |
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