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BF1206 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BF1206 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 21 page 2003 Nov 17 6 Philips Semiconductors Product specification Dual N-channel dual-gate MOS-FET BF1206 GRAPHS FOR AMPLIFIER a handbook, halfpage 0 0.5 1 2 VG1-S (V) ID (mA) 30 0 10 20 1.5 MLE258 (7) (6) (5) (4) (1) (2) (3) Fig.3 Transfer characteristics; typical values; amplifier a. VDS = 5 V; Tj =25 °C. (1) VG2-S =4V. (2) VG2-S = 3.5 V. (3) VG2-S =3V. (4) VG2-S = 2.5 V. (5) VG2-S =2V. (6) VG2-S = 1.5 V. (7) VG2-S =1V. handbook, halfpage 02 4 VDS (V) ID (mA) 6 32 24 8 0 16 MLE259 (1) (2) (3) (4) (5) (6) (7) Fig.4 Output characteristics; typical values; amplifier a. VG2-S = 4 V; Tj =25 °C. (1) VG1-S = 1.5 V. (2) VG1-S = 1.4 V. (3) VG1-S = 1.3 V. (4) VG1-S = 1.2 V. (5) VG1-S = 1.1 V. (6) VG1-S =1V. (7) VG1-S = 0.9 V. |
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