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BF1206 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BF1206 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 21 page 2003 Nov 17 3 Philips Semiconductors Product specification Dual N-channel dual-gate MOS-FET BF1206 ORDERING INFORMATION LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Ts is the temperature at the soldering point of the source lead. THERMAL CHARACTERISTICS CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION BF1206 − plastic surface mounted package; 6 leads SOT363 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per MOS-FET; unless otherwise specified VDS drain-source voltage − 6V ID drain current (DC) − 30 mA IG1 gate 1 current −±10 mA IG2 gate 2 current −±10 mA Ptot total power dissipation Ts ≤ 107 °C; note 1 − 180 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 240 K/W |
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